Retrouver ici l’ensemble des publications de l'équipe ER2MP
2016
- Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness
J. Hernández-Saz, M. Herrera, SI Molina, CR Stanley, S. Duguay
Acta Materialia, 2016. 103 : p. 651-657
https://doi.org/10.1016/j.actamat.2015.10.048
- Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography
D. Blavette, S. Duguay
J. Appl. Phys. 2016. 119 : p. 181502
http://aip.scitation.org/doi/10.1063/1.4948238
- Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N,
L. Rigutti, L. Mancini, D. Hernandez-Maldonado, W. Lefebvre, E. Giraud, R. Butté, J.F. Carlin, N. Grandjean, D. Blavette, F. Vurpillot
J. Appl. Phys, 2016. 119: p. 105704
http://dx.doi.org/10.1063/1.4943612
- Correlation between the nanoscale structure and the optical properties of Ce-doped SiO1.5 thin films
G. Beainy, J. Weimmerskirch-Aubatin, M. Stoffel, M. Vergnat, H. Rinnert, P. Pareige, E. Talbot
J. Lumin., 2016. In press
https://doi.org/10.1016/j.jlumin.2016.10.017
- Three-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells
W. Chen, P. Pareige, P. Roca i Cabarrocas
Appl. Phys. Lett., 2016. 108 : p. 253110
http://dx.doi.org/10.1063/1.4954707
- Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem
L. Rigutti, L. Mancini, E. Di Russo, I. Blum, F. Moyon, W. Lefebvre, D. Blavette
Microscopy and Microanalysis, 2016. 22 (S3): p. 650-651
https://doi.org/10.1017/S1431927616004104
- Preparation and Analysis of Atom Probe Tips by Xenon Focused Ion Beam Milling
R. Estivill, G. Audoit, J.P. Barnes, A. Grenier, D. Blavette
Microscopy and Microanalysis, 2016. 22(3): p. 576–582.
https://doi.org/10.1017/S1431927616000581
- Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography
J. Hernández-Saz, M. Herrera, FJ Delgado, S. Duguay, T. Philippe, M. Gonzalez, J. Abell, RJ Walters, SI Molina
Nanotechnology, 2016. 27(30) : p. 305402
http://iopscience.iop.org/article/10.1088/0957-4484/27/30/305402 -
Light emission from silicon containing Sn-nanocrystals
S. Roesgard, E. Talbot, J. Chevallier, J.L. Hansen, B. Julsgaard
Photonics Society Summer Topical Meeting Series IEEE, 2016. p. 19-20
https://doi.org/10.1109/PHOSST.2016.7548539 -
Accuracy of analyses of microelectronics nanostructures in atom probe tomography
F. Vurpillot, N. Rolland,R. Estivill, S. Duguay, D. Blavette
Semiconductor Science and Technology, 2016. 31(7) : p. 074002
http://iopscience.iop.org/article/10.1088/0268-1242/31/7/074002/ - Statistical nanoscale study of localized radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers
L. Rigutti, L. Mancini, W. Lefebvre, J. Houard, D. Hernandez-Maldonado, E. Di Russo, E. Giraud, R. Butté, J.F. Carlin, N. Grandjean, D. Blavette, F. Vurpillot
Semiconductor Science and Technology, 2016. 31(9) : p. 095009
http://iopscience.iop.org/article/10.1088/0268-1242/31/9/095009/meta
- Atomic scale investigation of arsenic segregation in high-k metal gate stacks
R. Estivill, M. Juhel, M. Gregoire, A. Grenier, V. Delaye, D. Blavette
Scripta Materialia, 2016. 113: p. 231-235
https://doi.org/10.1016/j.scriptamat.2015.10.034 -
Ultrathin PECVD epitaxial Si solar cells on glass via low‐temperature transfer process
Romain Cariou, Wanghua Chen, Ismael Cosme‐Bolanos, Jean‐Luc Maurice, Martin Foldyna, Valérie Depauw, Gilles Patriarche, Alexandre Gaucher, Andrea Cattoni, Ines Massiot, Stéphane Collin, Emmanuel Cadel, Philippe Pareige, Pere Roca i Cabarrocas
Progress in Photovoltaics: Research and Applications, 2016. 24(8): p.1075-1084
http://onlinelibrary.wiley.com/doi/10.1002/pip.2762/full -
Nanoscale control of Si nanoparticles within a 2D hexagonal array embedded in SiO2 thin films
C. Castro, G. BenAssayag, B. Pecassou, A. Andreozzi, G. Seguini, M. Perego, S Schamm-Chardon
Nanotechnology, 2016. 28(1) : p.014001
https://doi.org/10.1088/0957-4484/28/1/014001
2015
- Structural and optical study of Ce segregation in Ce-doped SiO1. 5 thin films
G Beainy, J Weimmerskirch-Aubatin, M Stoffel, M Vergnat, H Rinnert, C Castro, P Pareige, E TalbotJournal of Applied Physics 118 (23), 234308http://aip.scitation.org/doi/abs/10.1063/1.4938061
- Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters
Nooshin Amirifar, Rodrigue Lardé, Etienne Talbot, Philippe Pareige, Lorenzo Rigutti, Lorenzo Mancini, Jonathan Houard, Celia Castro, Vincent Sallet, Emir Zehani, Said Hassani, Corine Sartel, Ahmed Ziani, Xavier PortierJournal of Applied Physics 118 (21), 215703
http://aip.scitation.org/doi/abs/10.1063/1.4936167 -
Atomic scale investigation of Si and Ce‐rich nanoclusters in Ce‐doped SiO1. 5 thin filmsG Beainy, J Weimmerskirch‐Aubatin, M Stoffel, M Vergnat, H Rinnert, A Etienne, P Pareige, E Talbotphysica status solidi (c) 12 (12), 1313-1316
http://onlinelibrary.wiley.com/doi/10.1002/pssc.201510081/full