Publications ER2MP

Retrouver ici l’ensemble des publications de l'équipe ER2MP

2016

  1. Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness
    J. Hernández-Saz, M. Herrera, SI Molina, CR Stanley, S. Duguay
    Acta Materialia, 2016. 103 : p. 651-657
    https://doi.org/10.1016/j.actamat.2015.10.048
     
  2. Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography
    D. Blavette, S. Duguay
    J. Appl. Phys. 2016. 119 : p. 181502
    http://aip.scitation.org/doi/10.1063/1.4948238
     
  3. Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N,
    L. Rigutti, L. Mancini, D. Hernandez-Maldonado, W. Lefebvre, E. Giraud, R. Butté, J.F. Carlin, N. Grandjean, D. Blavette, F. Vurpillot
    J. Appl. Phys, 2016. 119: p. 105704
    http://dx.doi.org/10.1063/1.4943612
     
  4. Correlation between the nanoscale structure and the optical properties of Ce-doped SiO1.5 thin films
    G. Beainy, J. Weimmerskirch-Aubatin, M. Stoffel, M. Vergnat, H. Rinnert, P. Pareige, E. Talbot
    J. Lumin., 2016. In press
    https://doi.org/10.1016/j.jlumin.2016.10.017
     
  5. Three-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells
    W. Chen, P. Pareige, P. Roca i Cabarrocas
    Appl. Phys.  Lett., 2016. 108 : p. 253110
    http://dx.doi.org/10.1063/1.4954707
     
  6. Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem
    L. Rigutti, L. Mancini, E. Di Russo, I. Blum, F. Moyon, W. Lefebvre, D. Blavette
    Microscopy and Microanalysis, 2016. 22 (S3): p. 650-651
    https://doi.org/10.1017/S1431927616004104
     
  7. Preparation and Analysis of Atom Probe Tips by Xenon Focused Ion Beam Milling
    R. Estivill, G. Audoit, J.P. Barnes, A. Grenier, D. Blavette
    Microscopy and Microanalysis, 2016. 22(3): p. 576–582.
    https://doi.org/10.1017/S1431927616000581
     
  8. Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography
    J. Hernández-Saz, M. Herrera, FJ Delgado, S. Duguay, T. Philippe, M. Gonzalez, J. Abell, RJ Walters, SI Molina
    Nanotechnology, 2016. 27(30) : p. 305402
    http://iopscience.iop.org/article/10.1088/0957-4484/27/30/305402

  9. Light emission from silicon containing Sn-nanocrystals
    S. Roesgard, E. Talbot, J. Chevallier, J.L. Hansen, B. Julsgaard
    Photonics Society Summer Topical Meeting Series IEEE, 2016. p. 19-20
    https://doi.org/10.1109/PHOSST.2016.7548539

  10. Accuracy of analyses of microelectronics nanostructures in atom probe tomography
    F. Vurpillot, N. Rolland,R. Estivill, S. Duguay, D. Blavette
    Semiconductor Science and Technology, 2016. 31(7) : p. 074002
    http://iopscience.iop.org/article/10.1088/0268-1242/31/7/074002/

  11. Statistical nanoscale study of localized radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers
    L. Rigutti, L. Mancini, W. Lefebvre, J. Houard, D. Hernandez-Maldonado, E. Di Russo, E. Giraud, R. Butté, J.F. Carlin, N. Grandjean, D. Blavette, F. Vurpillot
    Semiconductor Science and Technology, 2016. 31(9) : p. 095009
    http://iopscience.iop.org/article/10.1088/0268-1242/31/9/095009/meta
     
  12. Atomic scale investigation of arsenic segregation in high-k metal gate stacks
    R. Estivill, M. Juhel, M. Gregoire, A. Grenier, V. Delaye, D. Blavette
    Scripta Materialia,  2016. 113: p. 231-235
    https://doi.org/10.1016/j.scriptamat.2015.10.034

  13. Ultrathin PECVD epitaxial Si solar cells on glass via low‐temperature transfer process
    Romain Cariou, Wanghua Chen, Ismael Cosme‐Bolanos, Jean‐Luc Maurice, Martin Foldyna, Valérie Depauw, Gilles Patriarche, Alexandre Gaucher, Andrea Cattoni, Ines Massiot, Stéphane Collin, Emmanuel Cadel, Philippe Pareige, Pere Roca i Cabarrocas
    Progress in Photovoltaics: Research and Applications, 2016. 24(8): p.1075-1084
    http://onlinelibrary.wiley.com/doi/10.1002/pip.2762/full

  14. Nanoscale control of Si nanoparticles within a 2D hexagonal array embedded in SiO2 thin films
    C. Castro, G. BenAssayag, B. Pecassou, A. Andreozzi, G. Seguini, M. Perego, S Schamm-Chardon
    Nanotechnology, 2016. 28(1) : p.014001
    https://doi.org/10.1088/0957-4484/28/1/014001

 

2015

  1. Structural and optical study of Ce segregation in Ce-doped SiO1. 5 thin films
    G Beainy, J Weimmerskirch-Aubatin, M Stoffel, M Vergnat, H Rinnert, C Castro, P Pareige, E Talbot
    Journal of Applied Physics 118 (23), 234308
    http://aip.scitation.org/doi/abs/10.1063/1.4938061
  2. Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters
    Nooshin Amirifar, Rodrigue Lardé, Etienne Talbot, Philippe Pareige, Lorenzo Rigutti, Lorenzo Mancini, Jonathan Houard, Celia Castro, Vincent Sallet, Emir Zehani, Said Hassani, Corine Sartel, Ahmed Ziani, Xavier Portier
    Journal of Applied Physics 118 (21), 215703
    http://aip.scitation.org/doi/abs/10.1063/1.4936167
  3. Atomic scale investigation of Si and Ce‐rich nanoclusters in Ce‐doped SiO1. 5 thin films
    G Beainy, J Weimmerskirch‐Aubatin, M Stoffel, M Vergnat, H Rinnert, A Etienne, P Pareige, E Talbot
    physica status solidi (c) 12 (12), 1313-1316
    http://onlinelibrary.wiley.com/doi/10.1002/pssc.201510081/full

 

 

 

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