Publications ER2MP

Retrouver ici l’ensemble des publications de l'équipe ER2MP


  1. Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness
    J. Hernández-Saz, M. Herrera, SI Molina, CR Stanley, S. Duguay
    Acta Materialia, 2016. 103 : p. 651-657
  2. Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography
    D. Blavette, S. Duguay
    J. Appl. Phys. 2016. 119 : p. 181502
  3. Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N,
    L. Rigutti, L. Mancini, D. Hernandez-Maldonado, W. Lefebvre, E. Giraud, R. Butté, J.F. Carlin, N. Grandjean, D. Blavette, F. Vurpillot
    J. Appl. Phys, 2016. 119: p. 105704
  4. Correlation between the nanoscale structure and the optical properties of Ce-doped SiO1.5 thin films
    G. Beainy, J. Weimmerskirch-Aubatin, M. Stoffel, M. Vergnat, H. Rinnert, P. Pareige, E. Talbot
    J. Lumin., 2016. In press
  5. Three-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells
    W. Chen, P. Pareige, P. Roca i Cabarrocas
    Appl. Phys.  Lett., 2016. 108 : p. 253110
  6. Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem
    L. Rigutti, L. Mancini, E. Di Russo, I. Blum, F. Moyon, W. Lefebvre, D. Blavette
    Microscopy and Microanalysis, 2016. 22 (S3): p. 650-651
  7. Preparation and Analysis of Atom Probe Tips by Xenon Focused Ion Beam Milling
    R. Estivill, G. Audoit, J.P. Barnes, A. Grenier, D. Blavette
    Microscopy and Microanalysis, 2016. 22(3): p. 576–582.
  8. Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography
    J. Hernández-Saz, M. Herrera, FJ Delgado, S. Duguay, T. Philippe, M. Gonzalez, J. Abell, RJ Walters, SI Molina
    Nanotechnology, 2016. 27(30) : p. 305402
  9. Light emission from silicon containing Sn-nanocrystals
    S. Roesgard, E. Talbot, J. Chevallier, J.L. Hansen, B. Julsgaard
    Photonics Society Summer Topical Meeting Series IEEE, 2016. p. 19-20

  10. Accuracy of analyses of microelectronics nanostructures in atom probe tomography
    F. Vurpillot, N. Rolland,R. Estivill, S. Duguay, D. Blavette
    Semiconductor Science and Technology, 2016. 31(7) : p. 074002

  11. Statistical nanoscale study of localized radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers
    L. Rigutti, L. Mancini, W. Lefebvre, J. Houard, D. Hernandez-Maldonado, E. Di Russo, E. Giraud, R. Butté, J.F. Carlin, N. Grandjean, D. Blavette, F. Vurpillot
    Semiconductor Science and Technology, 2016. 31(9) : p. 095009
  12. Atomic scale investigation of arsenic segregation in high-k metal gate stacks
    R. Estivill, M. Juhel, M. Gregoire, A. Grenier, V. Delaye, D. Blavette
    Scripta Materialia,  2016. 113: p. 231-235
  13. Ultrathin PECVD epitaxial Si solar cells on glass via low‐temperature transfer process
    Romain Cariou, Wanghua Chen, Ismael Cosme‐Bolanos, Jean‐Luc Maurice, Martin Foldyna, Valérie Depauw, Gilles Patriarche, Alexandre Gaucher, Andrea Cattoni, Ines Massiot, Stéphane Collin, Emmanuel Cadel, Philippe Pareige, Pere Roca i Cabarrocas
    Progress in Photovoltaics: Research and Applications, 2016. 24(8): p.1075-1084

  14. Nanoscale control of Si nanoparticles within a 2D hexagonal array embedded in SiO2 thin films
    C. Castro, G. BenAssayag, B. Pecassou, A. Andreozzi, G. Seguini, M. Perego, S Schamm-Chardon
    Nanotechnology, 2016. 28(1) : p.014001



  1. Structural and optical study of Ce segregation in Ce-doped SiO1. 5 thin films
    G Beainy, J Weimmerskirch-Aubatin, M Stoffel, M Vergnat, H Rinnert, C Castro, P Pareige, E Talbot
    Journal of Applied Physics 118 (23), 234308
  2. Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters
    Nooshin Amirifar, Rodrigue Lardé, Etienne Talbot, Philippe Pareige, Lorenzo Rigutti, Lorenzo Mancini, Jonathan Houard, Celia Castro, Vincent Sallet, Emir Zehani, Said Hassani, Corine Sartel, Ahmed Ziani, Xavier Portier
    Journal of Applied Physics 118 (21), 215703
  3. Atomic scale investigation of Si and Ce‐rich nanoclusters in Ce‐doped SiO1. 5 thin films
    G Beainy, J Weimmerskirch‐Aubatin, M Stoffel, M Vergnat, H Rinnert, A Etienne, P Pareige, E Talbot
    physica status solidi (c) 12 (12), 1313-1316