Fe implantation effect in 6H-SiC semiconductor investigated by Mössbauer spectrometry
M. L. Diallo1, L. Diallo1, A. Fnidiki1a, L. Lechevallier1, 2, F. Cuvilly1, I. Blum1, M. Viret3, M. Marteau4, D. Eyidi4, J. Juraszek1, A. Declémy4
1. Normandie Univ., INSA Rouen, UNIROUEN, CNRS, GPM, 76800 Rouen, France.
2. Département de GEII, Université de Cergy-Pontoise, rue d’Eragny, Neuville sur Oise, 95031 Cergy-Pontoise, France.
3. Service de Physique de l’Etat Condensé (DSM/IRAMIS/SPEC), UMR 3680 CNRS, Bât. 772, Orme des Merisiers, CEA Saclay, 91191 Gif sur Yvette, France.
4. Institut PPRIME, UPR 3346 CNRS, Université de Poitiers, ENSMA, SP2MI, téléport 2, 11 Bvd M. et P. Curie, 86962 Futuroscope, Chasseneuil, France.
P-doped 6H-SiC substrates were implanted with 57Fe ions at 380°C or 550°C to produce a diluted magnetic semiconductor (DMS) with a Fe homogeneous concentration of about 100 nm thickness. The magnetic properties were studied with 57Fe Conversion Electron Mössbauer Spectrometry (CEMS) at room temperature (RT). Results obtained by this technique on annealed samples prove that ferromagnetism in 57Fe-implanted SiC for Fe concentrations close to 2 and 4 % is mostly due to Fe atoms diluted in the matrix. In contrast, for Fe concentrations close to 6% it also comes from Fe in magnetic phase nano-clusters. This study allows quantifying the Fe amount in the interstitial and substitutional sites and the nanoparticles and shows that the majority of the diluted Fe atoms are substituted on Si sites inducing ferromagnetism up to RT.