Publications

                                                                2017

• Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives

J.P. Barnes;A. Grenier;I. Mouton;S. Barraud;G. Audoit;J. Bogdanowicz;C. Fleischmann;D. Melkonyan;W. Vandervorst;S. Duguay;N. Rolland;F. Vurpillot;D. Blavette;

Scripta Materialia : ,

Date de Publication : 06/2017

• New Atom Probe Tomography Reconstruction Algorithm for Multilayered Samples: Beyond the Hemispherical Constraint

Nicolas Rolland;François Vurpillot;Sébastien Duguay;Baishakhi Mazumder;James S. Speck;Didier Blavette;

Microscopy and Microanalysis : 23 (02), 247-254

Date de Publication : 22/03/2017

• Influence of Na on grain boundary and properties of Cu(In,Ga)Se2solar cells

Mohit Raghuwanshi;Emmanuel Cadel;Sébastien Duguay;Ludovic Arzel;Nicolas Barreau;Philippe Pareige;

Progress in Photovoltaics: Research and Applications : 25 (5), 367-375

Date de Publication : 20/02/2017

                                                               2016

• Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography

J Hernández-Saz;M Herrera;F J Delgado;S Duguay;T Philippe;M Gonzalez;J Abell;R J Walters;S I Molina;

Nanotechnology : 27 (30), 305402

Date de Publication : 16/06/2016

• Accuracy of analyses of microelectronics nanostructures in atom probe tomography

F Vurpillot;N Rolland;R Estivill;S Duguay;D Blavette;

Semiconductor Science and Technology : 31 (7), 074002

Date de Publication : 06/06/2016

• Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography

D. Blavette;S. Duguay;

Journal of Applied Physics : 119 (18), 181502

Date de Publication : 14/05/2016

• Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

J. Hernández-Saz;M. Herrera;S.I. Molina;C.R. Stanley;S. Duguay;

Acta Materialia : 103, 651-657

Date de Publication : 01/2016

                                                             2015

• Quantitative analysis of Si/SiGeC superlattices using atom probe tomography

Robert Estivill;Adeline Grenier;Sébastien Duguay;François Vurpillot;Tanguy Terlier;Jean-Paul Barnes;Jean-Michel Hartmann;Didier Blavette;

Ultramicroscopy : 159, 223-231

Date de Publication : 12/2015

• An analytical model accounting for tip shape evolution during atom probe analysis of heterogeneous materials

N. Rolland;D.J. Larson;B.P. Geiser;S. Duguay;F. Vurpillot;D. Blavette;

Ultramicroscopy : 159, 195-201

Date de Publication : 12/2015

• Effect of doping on the morphology of GaSb/GaAs nanostructures for solar cells

N. Fernández-Delgado;M. Herrera;S.I. Molina;C. Castro;S. Duguay;J.S. James;A. Krier;

Applied Surface Science : 359, 676-678

Date de Publication : 12/2015

• A Meshless Algorithm to Model Field Evaporation in Atom Probe Tomography

Nicolas Rolland;François Vurpillot;Sébastien Duguay;Didier Blavette;

Microscopy and Microanalysis : 21 (06), 1649-1656

Date de Publication : 09/11/2015

• Dynamic evolution and fracture of multilayer field emitters in atom probe tomography: a new interpretation

Nicolas Rolland;François Vurpillot;Sébastien Duguay;Didier Blavette;

The European Physical Journal Applied Physics : 72 (2), 21001

Date de Publication : 11/2015

• Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices

A.M. Beltrán;S. Duguay;C. Strenger;A.J. Bauer;F. Cristiano;S. Schamm-Chardon;

Solid State Communications : 221, 28-32

Date de Publication : 11/2015

• 3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs

J. Hernández-Saz;M. Herrera;S.I. Molina;C.R. Stanley;S. Duguay;

Scripta Materialia : 103, 73-76

Date de Publication : 07/2015

• Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques

A. Grenier;S. Duguay;J. P. Barnes;R. Serra;N. Rolland;G. Audoit;P. Morin;P. Gouraud;D. Cooper;D. Blavette;F. Vurpillot;

Applied Physics Letters : 106 (21), 213102

Date de Publication : 25/05/2015

• Influence of boron clustering on the emitter quality of implanted silicon solar cells: an atom probe tomography study

Mohit Raghuwanshi;Adeline Lanterne;Jérôme Le Perchec;Philippe Pareige;Emmanuel Cadel;Samuel Gall;Sébastien Duguay;

Progress in Photovoltaics: Research and Applications : 23 (12), 1724-1733

Date de Publication : 10/03/2015

• Quantitative investigation of SiGeC layers using atom probe tomography

Robert Estivill;Adeline Grenier;Sébastien Duguay;François Vurpillot;Tanguy Terlier;Jean-Paul Barnes;Jean-Michel Hartmann;Didier Blavette;

Ultramicroscopy : 150, 23-29

Date de Publication : 03/2015

                                                             2014

• Atom probe tomography in nanoelectronics

Didier Blavette;Sébastien Duguay;

The European Physical Journal Applied Physics : 68 (1), 10101

Date de Publication : 26/09/2014

• Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se2 solar cells

M. Raghuwanshi;E. Cadel;P. Pareige;S. Duguay;F. Couzinie-Devy;L. Arzel;N. Barreau;

Applied Physics Letters : 105 (1), 013902

Date de Publication : 07/07/2014

• Extended defects in ion-implanted si during nanosecond laser annealing

F. Cristiano;Y. Qiu;E. Bedel-Pereira;K. Huet;F. Mazzamuto;G. Fisicaro;A. La Magna;M. Quillec;N. Cherkashin;H. Wang;S. Duguay;D. Blavette;

2014 International Workshop on Junction Technology (IWJT) : ,

Date de Publication : 05/2014

• Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Yang Qiu;Fuccio Cristiano;Karim Huet;Fulvio Mazzamuto;Giuseppe Fisicaro;Antonino La Magna;Maurice Quillec;Nikolay Cherkashin;Huiyuan Wang;Sébastien Duguay;Didier Blavette;

Nano Letters : 14 (4), 1769-1775

Date de Publication : 13/03/2014

• 3D analysis of advanced nano-devices using electron and atom probe tomography

A. Grenier;S. Duguay;J.P. Barnes;R. Serra;G. Haberfehlner;D. Cooper;F. Bertin;S. Barraud;G. Audoit;L. Arnoldi;E. Cadel;A. Chabli;F. Vurpillot;

Ultramicroscopy : 136, 185-192

Date de Publication : 01/2014

                                                             2013

• Atom-probe tomography study of boron precipitation in highly implanted silicon

Didier Blavette;Huiyuan Wang;Manon Bonvalet;Florian Hüe;Sébastien Duguay;

physica status solidi (a) : 211 (1), 126-130

Date de Publication : 29/11/2013

• Point process statistics in atom probe tomography

T. Philippe;S. Duguay;G. Grancher;D. Blavette;

Ultramicroscopy : 132, 114-120

Date de Publication : 09/2013

• Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis

Rim Khelifi;Daniel Mathiot;Raghav Gupta;Dominique Muller;Manuel Roussel;Sébastien Duguay;

Applied Physics Letters : 102 (1), 013116

Date de Publication : 07/01/2013

• Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT

Jesús Hernández-Saz;Miriam Herrera;Sébastien Duguay;Sergio I Molina;

Nanoscale Research Letters : 8 (1), 513

Date de Publication : 2013

                                                             2012

• Advance in multi-hit detection and quantization in atom probe tomography

G. Da Costa;H. Wang;S. Duguay;A. Bostel;D. Blavette;B. Deconihout;

Review of Scientific Instruments : 83 (12), 123709

Date de Publication : 12/2012

• Temperature dependence of nucleation rate in a binary solid solution

H.Y. Wang;T. Philippe;S. Duguay;D. Blavette;

Philosophical Magazine Letters : 92 (12), 718-725

Date de Publication : 18/09/2012

• Co-implantation : A simple way to grow doped Si nanocrystals embedded in SiO2

Daniel Mathiot;Rim Khelifi;Dominique Muller;Sébastien Duguay;

MRS Proceedings : 1455,

Date de Publication : 01/2012

                                                             2011

• Atom probe tomography: from physical metallurgy towards microelectronics

Didier Blavette;Sébastien Duguay;Philippe Pareige;

International Journal of Materials Research : 102 (9), 1074-1081

Date de Publication : 09/2011

• Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon coimplantation

T. Philippe;S. Duguay;D. Mathiot;D. Blavette;

Journal of Applied Physics : 109 (2), 023501

Date de Publication : 15/01/2011

                                                             2010

• Direct imaging of boron segregation to extended defects in silicon

S. Duguay;T. Philippe;F. Cristiano;D. Blavette;

Applied Physics Letters : 97 (24), 242104

Date de Publication : 13/12/2010

• Atomic-scale redistribution of dopants in polycrystalline silicon layers

S. Duguay;A. Colin;D. Mathiot;P Morin;D. Blavette;

Journal of Applied Physics : 108 (3), 034911

Date de Publication : 08/2010

• Clustering and pair correlation function in atom probe tomography

T. Philippe;S. Duguay;D. Blavette;

Ultramicroscopy : 110 (7), 862-865

Date de Publication : 06/2010

• Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate

S. Duguay;M. Ngamo;P.F. Fazzini;F. Cristiano;K. Daoud;P. Pareige;

Thin Solid Films : 518 (9), 2398-2401

Date de Publication : 02/2010

• Atomic-scale study of the role of carbon on boron clustering

T. Philippe;S. Duguay;J.J. Grob;D. Mathiot;D. Blavette;

Thin Solid Films : 518 (9), 2406-2408

Date de Publication : 02/2010

• Characterization of Arsenic segregation at Si/SiO2 interface by 3D atom probe tomography

M. Ngamo;S. Duguay;P. Pichler;K. Daoud;P. Pareige;

Thin Solid Films : 518 (9), 2402-2405

Date de Publication : 02/2010

• Clustering and nearest neighbour distances in atom probe tomography: the influence of the interfaces

T. PHILIPPE;O. COJOCARU-MIRÉDIN;S. DUGUAY;D. BLAVETTE;

Journal of Microscopy : 239 (1), 72-77

Date de Publication : 11/01/2010

                                                             2009

• Evidence of atomic-scale arsenic clustering in highly doped silicon

S. Duguay;F. Vurpillot;T. Philippe;E. Cadel;R. Lardé;B. Deconihout;G. Servanton;R. Pantel;

Journal of Applied Physics : 106 (10), 106102

Date de Publication : 15/11/2009

• Clustering and nearest neighbour distances in atom-probe tomography

T. Philippe;F. De Geuser;S. Duguay;W. Lefebvre;O. Cojocaru-Mirédin;G. Da Costa;D. Blavette;

Ultramicroscopy : 109 (10), 1304-1309

Date de Publication : 09/2009

• Depth resolution function of the laser assisted tomographic atom probe in the investigation of semiconductors

Emmanuel Cadel;François Vurpillot;Rodrigue Lardé;Sébastien Duguay;Bernard Deconihout;

Journal of Applied Physics : 106 (4), 044908

Date de Publication : 15/08/2009

• Atomic scale study of boron interstitial clusters in ion-implanted silicon

M. Ngamo;S. Duguay;F. Cristiano;K. Daoud-Ketata;P. Pareige;

Journal of Applied Physics : 105 (10), 104904

Date de Publication : 15/05/2009

• Modeling artifacts in the analysis of test semiconductor structures in atom probe tomography

F. Vurpillot;M. Gruber;S. Duguay;E. Cadel;B. Deconihout;Erik M. Secula;David G. Seiler;Rajinder P. Khosla;Dan Herr;C. Michael Garner;Robert McDonald;Alain C. Diebold;

AIP Conference Proceedings : ,

Date de Publication : 2009

                                                             2008

• Structural analysis of annealed amorphous SiO/SiO2 superlattice

B. Pivac;P. Dubček;I. Capan;H. Zorc;S. Bernstorff;S. Duguay;A. Slaoui;

Thin Solid Films : 516 (20), 6796-6799

Date de Publication : 08/2008

                                                             2007

• Retention in metal–oxide–semiconductor structures with two embedded self-aligned Ge-nanocrystal layers

S Duguay;S Burignat;P Kern;J J Grob;A Souifi;A Slaoui;

Semiconductor Science and Technology : 22 (8), 837-842

Date de Publication : 29/06/2007

• Silicon nanoparticles formation in annealed SiO/SiO2 multilayers

I. Kovac˘ević;P. Dubc˘ek;S. Duguay;H. Zorc;N. Radić;B. Pivac;A. Slaoui;S. Bernstorff;

Physica E: Low-dimensional Systems and Nanostructures : 38 (1-2), 50-53

Date de Publication : 04/2007

                                                             2006

• Dielectric function of germanium nanocrystals between 0.6 and 6.5eV by spectroscopic ellipsometry

M. Mansour;A. En Naciri;L. Johann;S. Duguay;J.J. Grob;M. Stchakovsky;C. Eypert;

Journal of Physics and Chemistry of Solids : 67 (5-6), 1291-1294

Date de Publication : 05/2006

• Influence of the Ge Dose in Ion-implanted SiO2 Layers on the Related Nanocrystal-memory Properties

Sébastien Duguay;Jean-Jacques Grob;Abdelilah Slaoui;Philippe Kern;

MRS Proceedings : 933,

Date de Publication : 01/2006

                                                             2005

• Structural properties of Ge-implanted SiO2 layers and related MOS memory effects

S. Duguay;A. Slaoui;J.J. Grob;M. Kanoun;S. Burignat;A. Souifi;

Materials Science and Engineering: B : 124-125, 488-493

Date de Publication : 12/2005

• Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing

S. Duguay;J. J. Grob;A. Slaoui;Y. Le Gall;M. Amann-Liess;

Journal of Applied Physics : 97 (10), 104330

Date de Publication : 15/05/2005

Enseignements

-Enseignant à l'UFR des sciences physiques de l'université de Rouen.

            Enseignements de la L1 au M2 (principalement électricité, électronique et micro/nanoélectronique)

Enseignant à l'ESITECH  en Génie Physique (GP)

           Enseignements de GP3 à GP5 (TP et TD d'électronique, Photovoltaïque)