Publications ERDEFI

[1] N. Moultif, A. Echeverri, D. Carisetti, O. Latry, and E. Joubert. Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors using I-V Pulsed Characterizations and infra Red Microscopy. IEEE Transactions on Device and Materials Reliability, 2019.

[2] S. Duguay, A. Echeverri, C. Castro, and O. Latry. Evidence of mg segregation to threading dislocation in normally-on gan-hemt. IEEE Transactions on Nanotechnology, pages 1–1, 2019.

[3] A.M. Bouchour, A. El Oualkadi, P. Dherbécourt, O. Latry, and A. Echeverri. Investigation of the aging of power gan hemt under operational switching conditions, impact on the power converters efficiency. Microelectronics Reliability, page 113403, 2019.

[4] N. Moultif, O. Latry, M. Ndiaye, T. Neveu, E. Joubert, C. Moreau, and JF. Goupy. S-band pulsed-rf operating life test on algan/gan hemt devices for radar application. Microelectronics Reliability, page 113434, 2019.

[5] Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Eric Joubert, and Mohamed Masmoudi. Silicon Carbide Power MOSFET Model : An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm. IEEE Transactions on Power Electronics, 33(11) :9130–9133, November 2018.

[6] J.Z. Fu, F. Fouquet, M. Kadi, and Pascal Dherbécourt. Evolution of C-V and I-V characteristics for a commercial 600V GaN GIT power device under repetitive short-circuit tests. Microelectronics Reliability, 88-90 :652–655, September 2018.

[7] O. Latry, Pascal Dherbécourt, Patrick Denis, Fabien Cuvilly, and Moncef KADI. Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition. Engineering Failure Analysis, 83 :185–192, January 2018.

[8] Niemat Moultif, Alexis Divay, Eric Joubert, and Olivier Latry. Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures. Engineering Failure Analysis, 81 :69–78, November 2017.

[9] M. Abdelaoui, M. Idrissi, M. Benzohra. ELECTRONIC SCATTERING IN AN N-TYPE SEMICONDUCTOR UNDER A DC MAGNETIC FIELD. African Review of Science, Technology and Development, 2016, 1 (2), pp.18-27.


[10] Sanae TAOUFIK, Pascal Dherbécourt, Ahmed ELOUALKADI, and Farid Temcamani. Reliability and failure analysis of UHF RFID passive tags under thermal storage. IEEE Transactions on Device and Materials Reliability, 17(3) :531 – 538, September 2017.

[11] N. Moultif, E. Joubert, M. Masmoudi, and O. Latry. Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures. Microelectronics Reliability, 76-77 :243 – 248, September 2017.

[12] S. Mbarek, Pascal Dherbécourt, O. Latry, and F. Fouquet. Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET. Microelectronics Reliability, 76-77 :527 – 531, September 2017.

[13] N. Moultif, E. Joubert, M. Masmoudi, and O. Latry. Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures. Microelectronics Reliability, 76-77 :243–248, September 2017.

[14] Lu Zhao, Antoine Normand, Jonathan Houard, Ivan Blum, Fabien Delaroche, O. Latry, Blaise Elysée Guy Ravelo, and François Vurpillot. Optimizing Atom Probe Analysis with Synchronous Laser Pulsing and Voltage Pulsing. Microscopy and Microanalysis, 23(2) :221–226, April 2017.

[15] O. Latry, A. Divay, D. Fadil, and Pascal Dherbécourt. Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena. Chinese Journal of Semiconductors, 38(1), January 2017.

[16] N. Moultif, E. Joubert, and O. Latry. Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy. Advanced Electromagnetics, 5(3) :20, September 2016.

[17] A. Divay, Cédric Duperrier, F. Temcamani, and O. Latry. Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. Microelectronics Reliability, 64 :585 – 588, September 2016.

[18] S. Mbarek, F. Fouquet, Pascal Dherbécourt, M. Masmoudi, and O. Latry. Gate Oxide Degradation of SiC MOSFET under Short-Circuit Aging Tests. Microelectronics Reliability, 64 :415–418, September 2016.

[19] Sanae TAOUFIK, Ahmed ELOUALKADI, Pascal Dherbécourt, Farid Temcamani, and Bruno DELACRESSONNIERE. Simulation and experimentation of an RFID system in the UHF band for the reliability of passive tags. Lecture Notes in Electrical Engineering, Springer, 1 :35–43, April 2016.

[20] Farid Temcamani, Jean Baptiste Fonder, O. Latry, and Cédric Duperrier. Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life. IEEE Transactions on Microwave Theory and Techniques, 64(3) :756–766, March 2016.

[21] L. Zhao, A. Delamare, Antoine Normand, F. Delaroche, O. Latry, F. Vurpillot, and B. Ravelo. RF Pulse Signal Integrity Analysis for Nonlinear Ended Microstrip Line Atom-Probe Tomography. IOP Conference Series : Materials Science and Engineering, 120 :012006, March 2016.

[22] A. Divay, O. Latry, Cédric Duperrier, and F. Temcamani. Ageing of GaN HEMT devices : which degradation indicators ? Chinese Journal of Semiconductors, 37(1), January 2016.

[23] A Divay, M Masmoudi, O Latry, C Duperrier, and F Temcamani. An athermal measurement technique for long traps characterization in GaN HEMT transistors. Microelectronics Reliability, 55 :1703–1707, September 2015.

[24] Joubert Eric, O. Latry, and Jean-Philippe Roux. Temperature and Dilatation Estimation for Modern Semiconductor Devices. Sensors & Transducers Journal, 184(1) :130–135, January 2015.