Study of the Trap Phenomenon in RF GaN HEMTs Transistors: Electrical Characterization and Physical Simulation

The objective of this thesis is to study trap phenomena in the latest generations of Gallium Nitride (GaN)-based High Electron Mobility Transistors (HEMTs). Various methods for characterizing trap behavior in GaN HEMTs exist, such as Deep Level Transient Spectroscopy (DLTS) for capacitance and current (C-DLTS and I-DLTS), Athermal Direct Current Transient Spectroscopy (A-DCTS), Deep Level Optical Spectroscopy (DLOS), Gate-Lag (GL) and Drain-Lag (DL) transient measurements, the study of transconductance frequency dispersion, S-parameter measurements, and low-frequency noise measurements. The temporal and thermal ranges explored by these techniques are sometimes different, highlighting the complementarity of these measurements.

The candidate must have training in electronics, with knowledge of RF power transistors. Knowledge in the field of materials (semiconductors, solid state physics) and physical simulation will be appreciated.

Contacts : Pascal Dherbécourt, 02 32 95 51 57. Niemat Moultif, 02 32 95 50 78.
Interested candidates should send a cover letter and their CV to : pascal.dherbecourt@univ-rouen.fr ; niemat.moultif0@univ-rouen.fr; mohamed.masmoudi@univ-rouen.fr .