Publications

 

Design of Dedicated Radar Meteorology Power Amplifier at 3 GHz

Paula Akossiwa Atchike ; Taoufik Sanae; Pascal Dherbécourt; Eric Joubert; Ahmed El Oualkadi.

International Conference on Innovative Research in Applied Science, Engineering and Technology

IEEE Explore, publisher

FEZ, Maroc,16-17 May 2024.

 

GaN HEMT power amplifier design for 2.45GHz Wireless applications

Paula A. Atchike, Jamal Zbitou, Ahmed El Oualkadi, Pascal Dherbecourt

SAIEE Africa Research Journal, Volume: 114, Issue: 4, pp 106 – 113, december 2023

Electronic ISSN: 1991-1696, DOI: 10.23919/SAIEE.2023.10319379

IEEE Explore, publisher: SAIEE

 

PHM method for detecting degradation of GaN HEMT ON resistance, application to power converter

Habib Boulzazen , Chawki Douzi, Eric Joubert, Pascal Dherbécourt , Moncef Kadi and François Fouquet

E-prime Elsevier

Received 18 July 2022, Revised 31 August 2022, Accepted 6 September 2022, Available online 13 September 2022, Version of Record 18 September 2022.

https://doi.org/10.1016/j.prime.2022.100060

 

A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications

DOUZI Chawki; KADI Moncef; DHERBECOURT Pascal; BESSEROUR Mohamed Akram; JOUBERT Eric; FOUQUET François

Microelectronics Reliability

Available online 25 September 2022, 114777

https://doi.org/10.1016/j.microrel.2022.114777

 

“Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics”

Wadia Jouha; Mohamed Masmoudi; Ahmed El Oualkadi; Eric Joubert; Pascal Dherbécourt

IEEE Transactions on Device and Materials Reliability,  September 2020

Volume: 20, Issue: 3, pp 506-511

Print ISSN: 1530-4388

Online ISSN: 1558-2574

Digital Object Identifier: 10.1109/TDMR.2020.2999029

 

“Estimation of losses of GaN HEMT in power switching applications based on experimental characterization »

Al Mehdi Bouchour, Ahmed El Oualkadi, Olivier Latry, Pascal Dherbécourt, Andrés Echeverri.

Computers and Electrical Engineering Journal, Volume 84, June 2020, 106622

 https://doi.org/10.1016/j.compeleceng.2020.106622

 

“Investigation of the aging of power GaN HEMT under operational switching conditions, impact on the power converters efficiency”

Al Mehdi Bouchour, Ahmed El Oualkadi, Pascal Dherbécourt, Olivier Latry, A Echeverri

Microelectronics Reliability, Volumes 100–101, September 2019,

  https://doi.org/10.1016/j.microrel.2019.113403

 

“In depth analysis of the Static Behavior Analysis of SiC MOSFET and its associated parameters using both compact  model and simulation”

Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Mohamed Masmoudi, Eric Joubert

IET Circuits, Devices & Systems, 7pp.,

Print ISSN 1751-858X,

Online ISSN 1751-8598

Available online: 08 November 2019

DOI:  10.1049/iet-cds.2018.5509

 

“An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET”

Wadia Jouha, Pascal Dherbécourt, Ahmed El Oualkadi, Eric Joubert, Mohamed Masmoudi

 International Journal of Information Science & Technology – iJIST, ISSN : 2550-5114

Vol.3 No.1, pages 20-25, February 2019.

 

‘‘Experimental and microscopic analysis of 600V GaN-GIT under the short-circuit aging tests.’’,

 J-Z FU, F. Fouquet, F. Cuvilly, M. Kadi, P. Dherbécourt,

International Journal of Information Science & Technology – iJIST, ISSN : 2550-5114

Vol.3 No.1, pages 14-19, Fébruary 2019.

 

‘‘Evolution of C-V and I-V characteristics for a commercial 600V GaN GIT power device under repetitive short-circuit tests’’,

J-Z FU, F. Fouquet, M. Kadi, P. Dherbécourt,

 Microelectronics reliability, Vol 88-90, Pages 652-655, September 2018.

 

« Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on Levenberg-Marquardt Algorithm»

Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Eric Joubert and Mohamed Masmoudi

IEEE Transactions on Power electronics, novembre 2018,

Volume: 33, Issue:11, Pages: 9130-9133

Print ISSN: 0885-8993

Online ISSN: 1941-0107

https://ieeexplore.ieee.org/document/8331167/authors#authors

Digital Object Identifier: 10.1109/TPEL.2018.2822939

 

 

“Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition”

 

Olivier Latry,Pascal Dherbécourt, Patrick Denis, Fabien Cuvilly, Moncef Kadi

Journal: Engineering Failure Analysis, paru en septembre 2017.

https://doi.org/10.1016/j.engfailanal.2017.09.010

 

“Reliability and Failure Analysis of UHF RFID Passive Tags under Thermal Storage”

Sanae Taoufik, Pascal Dherbécourt, Ahmed El Oualkadi, Farid Temcamani

IEEE Transactions on Device and Materials Reliability

Volume PP Issue 99, août 2017.

http://ieeexplore.ieee.org/document/7997768/authors?ctx=authors

 

“Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET”

S. Mbarek, P. Dherbécourt, Olivier Latry, François Fouquet

Microelectronic Reliability, Paru le 8 juillet 2017

https://doi.org/10.1016/j.microrel.2017.07.002

 

 “Physical Schottky parameters extraction using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena”

Olivier Latry, Alexis Divay, Dalal Fadil, Pascal Dherbécourt

Journal of Semiconductors, Vol 38, N°1, janvier 2017.

DOI:10.1088/1674-4926/38/1/014007

 

 “Gate oxide degradation of SiC MOSFET under short-circuit aging tests”

S. Mbarek, F. Fouquet, P. Dherbecourt, M. Masmoudi, O. Latry

Microelectronic Reliability Journal, Vol 64, September 2016

https://doi.org/10.1016/j.microrel.2016.07.132

 

“Realization of a dedicated bench for reliability and robustness studies of high LDMOS power transistors”

P.Dherbécourt, O.Latry, E.Joubert, K.Dehais-Mourgues, H.Maanane, JP.Sipma, P.Eudeline.

International Journal of microwave and optical technology, IJMOT, ISSN: 1553-0396, VOL.9, NO.6, Novembre 2014.

 

“Robustness of 4H-SiC 1200V Schottky diodes under high Electrostatic Discharge like Human Body Model stresses: a complete failure analysis”

P. Denis, P. Dherbécourt, O. Latry, M. Kadi, C. Genevois, F. Cuvilly and M. Brault.

Journal “Diamond and related materials”, Vol 44, p 62-70, april 2014

 

“Adding channels with PSBT Format at 40 Gbit/s in an existing 10 Gbit/s Optical Network”

F. Khecib, O. Latry, P. Dherbécourt, M. Kétata

Optics Communications, Volume 284, Issue 21, October 2011, Pages 5125-5129
 

 “Characterization and Modeling of Hot Carrier Injection in LDMOS for L-Band radar application”

L. Lachèze, O. Latry, P. Dherbécourt, K. Mourgues, V. Purohit, H.Maanane, J.P. Sipma, F. Cornu, P.Eudeline

Microelectonics Reliability, Volume 51, Issue 8, Aout 2011, pages 1289-1294,

 

 “A 5000 hours RF Life Test on 330 W RF-LDMOS transistors for radars applications”

O. Latry, P. Dherbécourt, K. Mourgues, H. Maanane, J.P. Sipma, F. Cornu, P.Eudeline, M. Masmoudi,

“Microelectonics Reliability”, Volume 50, Issues 9-11, September 2010, pages 1574-1576.

 

”Experimental considerations on bandwidth measurement of ultra-fast photoreceptors by optical heterodyning”

O. Latry, G. Ducournau, P. Dherbécourt , E. Joubert and M.Kétata

“Measurements”, volume 40, issue 4, pp. 406-417, May 2007.

 

 “Generation of an amplitude modulated optical wave up to 275 GHz by lasers waves mixing for optical components bandwidth measurement”

Pascal Dherbécourt, Olivier Latry, Eric Joubert, Mohamed Ketata

Optical Engineering Letters, juillet 2002, Vol 41, N°7, pp 1469-1470

 

 “Achieving of an optical very high frequency modulated wave source using heterodyne technique”

Pascal Dherbécourt, Olivier Latry, Eric Joubert, Philippe Di Bin, Mohamed Kétata

Optics Communications, 1er Février 2002, Vol 202, pp 81-90.

 

 

“The development of specific training for partnership between the university and regional business”

 Mohamed Kétata; Pascal Dherbécourt, Delphine Lejeune

European Journal of Qualification, ISSN 2069-0290 N°4, July 2011, pages 28-31

 

“Partnership between higher education and the business world feedback at Rouen technology institute about the employability of young graduates”  

Mohamed Kétata; Pascal Dherbécourt, Isabelle Roux

European Journal of Qualification, ISSN 2069-0290 N°2, Mai 2011, pages 31-36

 

 

 

"An Extraction Method of SiC Power MOSFET Threshold Voltage"

Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Eric Joubert and Mohamed Masmoudi, February 2018.

Editor Springer " Recent Advances in Electrical and Information Technologies for Sustainable Development”, page 11-20.

DOI https://doi.org/10.1007/978-3-030-05276-8

Print ISBN : 978-3-030-05275-1

https://www.springer.com/us/book/9783030052751#aboutBook

 

“ Vieillissements de tags UHF-RFID couplés à l’analyse physique des défaillances  ”

   Pascal Dherbécourt, Sanae Taoufik, Ahmed El Oualkadi, Farid Temcamani, Bruno Delacressionniere.“ 

   Ouvrage : « 50 ans de recherche et d’innovation», Volume 2

   Editions Harmattan, ISTE ISBN : 978-2-343-12973-0, 4 mai 2018, pages 88 à 97.

 

“ Mesure de la température interne des composants électroniques “

E. Joubert, O. Latry, P. Dherbécourt, M.Fontaine, C.Gautier, H. Polaert, P.Eudeline

« Les systèmes mécatroniques embarqués: analyse des causes de défaillances, modélisation, simulation et optimisation », tome 1

Ed ; ISTE (ISBN : 978-1-78405-057-3) Chap 7 pp. 167-186, Mars 2015.

 

“ Internal Temperature Measurement of Electronic Components“

E. Joubert, O. Latry, P. Dherbécourt, M.Fontaine, C.Gautier, H. Polaert, P.Eudeline

“Embeded Mechatronic systems 1 » Predictive reliability.

Elsevier (ISBN: 978-1-78548-013-3), pp. 164-184, 2015.

 

“ Workbench for aging microwave power transistors in operational conditions" P.Dherbécourt, O.Latry, K.Dehais-Mourgues, JB.Fonder, C.Duperrier, F.Temcamani, H.Maanane, JP. Sipma

“Les systèmes mécatroniques embarqués : analyse des causes de défaillances, modélisation, simulation et optimisation », tome 2

Ed ; ISTE (ISBN : 978-1-78405-059-7) Chap 2, pp. 45-70, Mars 2015.

 

 “Aging power transistors in operational conditions"

P.Dherbécourt, O.Latry, K.Dehais-Mourgues, JB.Fonder, C.Duperrier, F.Temcamani, H.Maanane, JP. Sipma

“Embeded Mechatronic systems 2 » Analysis of failures, modeling, simulation and optimization

Elsevier (ISBN: 978-1-78548-014-0), pp. 23-48, 2015.

 

“Optical Fiber Components: Design and Applications"

G. Ducournau, O. Latry, P.Dherbécourt , E. Joubert , M. Kétata

Research SignPost Edition, Editor: H. Hamam, mai 2006. Page 51-84

 

 

“Temperature Effects of GaN HEMTs on the Design of Power Converters”

Al Mehdi Bouchour, Pascal Dherbécourt, Olivier Latry, Ahmed El Oualkadi

International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, Kenitra, Morocco

European Union Digital Library,

http://dx.doi.org/10.4108/eai.24-4-2019.2284227

DOI 10.4108/eai.24-4-2019.2284227

 

“New Technologies of Power Transistors for Efficiency Increase of Power Converters: The Reliability Consideration”

Pascal Dherbécourt, Ahmed El Oualkadi, Eric Joubert, Al Mehdi Bouchour, Wadia Jouh, Mohamed Masmoudi, Olivier Latry

International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, Kenitra, Morocco

European Union Digital Library,

http://dx.doi.org/10.4108/eai.24-4-2019.2284211

DOI 10.4108/eai.24-4-2019.2284211

 

 

“Modeling of power GaN HEMT for switching circuits applications using Levenberg-Marquardt Algorithm”

Al Mehdi Bouchour, Pascal Dherbécourt, Andres Echeverri, Ahmed El Oualkadi, Olivier Latry

IEEE International Symposium on Advanced Electrical and Communication Technologies, ISAECT18, 21-23 november 2018, Rabat-Kenitra, Morocco.

DOI: 10.1109/ISAECT.2018.8618845

 

‘‘Aging of GaN GIT under repetitive short-circuit tests’’,

J-Z FU, F. Fouquet, M. Kadi, P. Dherbécourt, IEEE Workshop on Wide Bandgap Power Devices and Applications  in Aisa (Wipda – Aisa), May 17th to 19th May, 2018, in Xi’an, Shaanxi, Chine.

 

 “Experimental study of the degradation mode of 600V GaN transistor in different energy under the short-circuit aging test”

J-Z.Fu, F. Fouquet, M. Kadi, P Dherbécourt

19th IEEE Mediterranean Electrotechnical Conference Maroc. IEEE MELECON 2018, 2-7 May, 2018, Marrakech, Maroc.

 

 “A New Extraction Method of SiC Power MOSFET Threshold Voltage using a Physical Approach”

Wadiâ Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Eric Joubert, Mohamed Masmoudi

3ème Conférence Internationale on “Electrical and Information Technologies” ICEIT’ 2017, 15-18 novembre 2017, Rabat Maroc.

 

 “Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET”

28st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis,) 25-28 Septembre 2017, Bordeaux, France.

Safa Mbarek, Pascal Dherbecourt, François Fouquet, Olivier Latry

 

 “Behavior study of a 600V GaN transistor under short- circuit experimental test”

Jian Zhi. Fu, François Fouquet, Moncef Kadi, Pascal. Dherbécourt

TELECOM’2017 et 10e JFMMA, 10-12 mai 2017, Rabat, Maroc.

 

 “Gate oxide degradation of SiC MOSFET under short-circuit aging tests”

Esref 2016 (27st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis,) 19-22 Septembre 2016, Händel-Halle, (Saale), Allemagne.

Safa Mbarek, François Fouquet, Pascal Dherbecourt, Mohamed Masmoudi, Olivier Latry

 

“Reliability and Failure Analysis of UHF-RFID Tags for Harsh Environments Applications”

S. Taoufik, A ElOualkadi, P. Dherbécourt, F. Temcamani, B. Delacressonniere

4 th Advanced Electromagnetics Symposium, 2-28 juillet 2016, Malaga, Espagne

 

“ Static Behavior Analysis of Silicon Carbide Power MOSFET for Temperature Variations“

Wadiâ Jouha, Pascal Dherbécourt, Eric Joubert, Ahmed El Oualkadi

2nd International Conference on Electrical and Information Technologies ICEIT’2016, 4-7 mai 2016, Tanger, Maroc

 

 “ Physical Schottky parameters extraction using the Lambert function in AlGaN/GaN HEMT devices with defined conduction phenomena“

Olivier Latry, A Divay, Dalal Fadil, Pascal Dherbécourt.

EMN Energy Material Nanotechnology, Beijing Meetings, 21-25 Avril 2016, Chine

 

 

“Simulation and experimentation of an RFID system in the UHF band for the reliability of passive tags”

Sanae Taoufik, Ahmed El Oualkadi, Farid Temcamani, Bruno Delacressonniere, Pascal Dherbécourt

Congrès international MedICT2015 , 7-9 mai 2015, Saïdia Maroc

Proceedings Springer : Vol. 380, Ahmed El Oualkadi et al. (Eds): Proceedings of the Mediterranean Conference on Information & Communication Technologies 2015,

ISBN 978-3-319-30298-0

 

 “ Performances et fiabilité d’un système d’identification RFID en bande UHF“ .

S. Taoufik, A. El Oualkadi, P. Dherbécourt, B. Delacressonniere, F. Temcamani

TELECOM’2015 et 9ème JFMMA, 13-15 mai 2015, Meknès, Maroc

 

 “ Etude de la fiabilité des composants grand gap : Approche par les essais longue durée et l’analyse de défaillance “ .

O. Latry, P. Dherbécourt, E. Joubert, M. Masmoudi, K. Dehais-Mougues, J. Marcon, D. Fadil, A. Divay, S. Mbarek, N. Moutif, A. Echeverri

TELECOM’2015 et 9ème JFMMA, 13-15 mai 2015, Meknès, Maroc

 

 “ Etude de la Robustesse et des Mécanismes de défaillance d’un transistor MOSFET en SiC sous contraintes électriques et thermiques“ .

S. Mbarek, P. Dherbécourt, F. Fouquet, O. Latry

TELECOM’2015 et 9ème JFMMA, 13-15 mai 2015, Meknès, Maroc

 

 “Simultaneous measurement of the temperature and the mechanical expansion of power electronics components”

E. Joubert, O. Latry, P. Dherbécourt, J.P. Roux.

CENICS 2014 : 7th International Conference on Advances in Circuits, Electronics and Micro-electronics, Lisbonne, Portugal, 16-20 novembre 2014.

 

 “Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints: To an in-depth physical failure analysis”

S Mbarek, P.Dherbécourt, Olivier Latry, F Fouquet, Dhouha Othman, Mounira Berkani, Stéphane Lefebvre

CENICS 2014 : 7th International Conference on Advances in Circuits, Electronics and Micro-electronics, Lisbonne, Portugal, 16-20 novembre 2014

 

 “A workbench development for L-Band LDMOS amplifier reliability study”

P.Dherbécourt, O.Latry, E.Joubert, K.Dehais-Mourgues, H.Maanane, JP.Sipma, P.Eudeline.

IEEE Digital Library Journal (Xplore), 4th IEEE “International Conference on Multimedia Computing and Systems, Power Electronics, Superconducting”, Marrakech, Maroc, 14-16 april 2014.

Page(s): 1573 – 1578, ISBN: 978-1-4799-3823-0

DOI : 10.1109/ ICMCS.2014.6911246

 

 “Failure analysis of SiC schottky diodes 1200 V devices at highTemperature – Failure Mechanisms Investigations”

P.Denis, P.Dherbécourt, K.Daoud.

Congrès international Euromat 2012, Lausanne, Suisse, 23-27 juillet 2012

 

“ Reliability and Robustness studies of SiC diodes through LF noise and EM emission measurements“

Patrick Denis, Guillaume Coru, Moncef Kadi, Pascal Dherbécourt, Kaouther Daoud.

Congrès International Iconic (International conference on electromagnetic near field characterization and imaging), IRSEEM Esigelec Rouen, du 30 novembre au 02 décembre 2011.

 

 “ Le développement d’actions spécifiques de formation pour un partenariat durable entre l’Université de Rouen-IUT et les entreprises régionales“

Pascal Dherbécourt, Mohamed Kétata, Delphine Lejeune

Communication, congrès UNISO 2011 Université dans la société, Cnam Paris, du 06 au 10 juillet 2011.

 

 “A 5000 hours RF Life Test on 330 W RF-LDMOS transistors for radars application”

Esref (21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis,) Italie, Cassino, du 11 au 15 octobre 2010.

O. Latry, P. Dherbécourt, K. Mourgues, H. Maanane, J.P. Sipma, F. Cornu, P.

Eudeline, M. Masmoudi,

 

 “L’insertion professionnelle des jeunes diplômés de Licence Professionnelle facilitée par le partenariat entreprise : retour d’expérience à l’Université de Rouen”

Mohamed Kétata; Pascal Dherbécourt, Isabelle Roux

Communication, congrès UNISO 2010 Université dans la société, Timisoara, Roumanie du 07 au 11 juillet 2010.

 

 “ New approach for thermal investigation of a III-V power transistor “

Maxime Fontaine, Eric Joubert, Olivier Latry, Pascal Dherbécourt, Mohamed Kétata

International Workshop on Thermal Investigation of IC’s and Systems, 24-26 septembre 2008, Rome, Italie.

ISBN 978-2-35500-008-9 pages 26-30

 

 "Upgraded Optical Transmission Link by mixing STM-16 and STM-64 with OOK and PSBT formats in WDM system”

F. Khecib, O. Latry, P. Dherbécourt et M. Ketata

Systemics Cybernetics and informatics WMSCI In N. Callaos, editor, volume V, pages 263–268, IIIS ,WMSCI 2008.

Orlando Floride USA, du 29 juin au 2 juillet 2008.

 

 

“ La licence professionnelle EAS en alternance à l’IUT de Rouen: de la formation universitaire vers l’acquisition des compétences professionnelles“

Pascal Dherbécourt , Mohamed Kétata

Communication, congrès UNISO 2008 7ème Université d’été, ACPART,

Iasi, Roumanie du 16 au 20 juillet 2008.

 

 “Simulation of Polarization Mode Dispersion compensation in high birefringent optical fibers at 40 Gbits/s”

D. Sy Aïdara, Pascal Dherbécourt, Olivier Latry, Mohamed Kétata

EOS International “Conference trends in optoelectronics” SPIE Europe, communication orale, pages 43–45, June 18-19 2007 Munich, Germany

 

"Semiconductor laser under modulation for application in Coherent Reflectometry"

O.Boukari, L.Hassine , O.Latry, P.Dherbecourt, H. Bouchriha, M.Ketata

EOS International “Conference trends in optoelectronics” SPIE Europe

communication orale, June 18-19 2007, pp 80–81, Munich, Germany

 

“Theoretical study of Semiconductor laser under modulation”

Olfa Boukari, , L.Hassine, Olivier Latry, Pascal Dherbécourt, Mohamed Kétata,

H. Bouchriha

ISC2007 2ème Conférence Internationale de Spectroscopie, 25-28 Mars 2007, American Institut of physics Conference Proceedings, Vol. 935, No. 1. (2007), pp. 72-79.

Sousse, Tunisie.

 

“ Exploitation de différentes techniques de mesure de PMD dans les composants optiques“

D. Sy Aïdara, Mickaël Grisel, Pascal Dherbécourt, Olivier Latry, Mohamed Kétata

TELECOM’2005 & 4èmes JFMMA, Institut National des Postes et Télécommunications, 23,24 & 25 Mars 2005, Rabat, Maroc

 

 “Achieving an amplitude modulated optical wave up to 275 GHz for optical components test”

Pascal Dherbécourt, Olivier Latry, Eric Joubert, Mohamed Kétata

Contribution orale, Congrès SPIE’s Photonics Fabrication Europe,

28 octobre - 1 novembre 2002, Brugge, Belgique.

Proceeding of SPIE, Vol 4943, pp 108-115, session 4, 30th october 2002.

ISBN 9780819447388 DOI :10.1117/12.468547

 

 “Two lasers mixing for generation of a modulated optical wave up to 275 GHz”

Pascal Dherbécourt, Olivier Latry, Eric Joubert, Mohamed Kétata

Contribution orale, 19ème Congress ICO (International Commission for Optics), 25-30 août 2002, Florence, Italie.

Technical Digest Part 1of 2, Proceeding of SPIE, Vol 4829

ISBN 9780819445964 DOI : 10.1117/12.524881.

 

 “Mixing of Two 1.55mm Laser Waves in Millimeter Frequency Range for Optical Components Test”

Pascal Dherbécourt, Olivier Latry, Eric Joubert, Mohamed Kétata

Contribution orale, Congrès SPIE Photonics West, 19-25 january 2002, San Jose Californie U.S.A

Proceeding of SPIE, Vol 4648-08 pp 65-74

ISBN 9780819443878 DOI : 10.1117/12.462661

 

 

Enseignements

Chef du département Geii de septembre 2017 à novembre 2020, actuel responsable de la Licence Professionnelle Maintenance et Technologie Electronique Instrumentation Aéronautique et Spatial et Transports LP MT-EIAST, porteur du projet de création en 2005 et responsable pédagogique entre 2005 et 2017.

Enseignant en : Physique appliquée, électronique, électricité, télécommunications analogiques et numériques, hyperfréquences, théorie et traitement du signal, radars, télécommunications par fibres optiques, conduite de projets.

Encadrement de stages d’étudiants de DUT, de Licence Professionnelle, de Licence L3, de Master 2, suivi de Contrats de Professionnalisation, encadrements de projets tutorés.

Intervenant pour des salariés d'entreprises dans le cadre de la FTLV (Rohde & Schwarz, Lucent Technologies, le groupe Thales, ...) pour la réalisation de formations en hyperfréquence à l’IUT de Rouen et sur site.

Membre fondateur en 2017 du MRTC "Microwave and Radar Training Center et formateur: centre de formation en hyperfréquences et radars.

Echanges d’étudiants en DUT Geii et LP MT-EIAS avec l’université de Moncton au Canada et avec l’école ENSA de Tanger Maroc. 

Co-auteur de plusieurs articles pédagogiques parus dans la revue nationale GESI des départements Geii.